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Growth of Cobalt on GaAs(001) Studied by Photoemission and Photoelectron Diffraction

S. Ababou, B. Lépine, R. Pingel, A. Godefroy, A. Quémerais, A. Guivarch and G. Jézéquel
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S. Ababou: Laboratoire de Spectroscopie du Solide, ERS CNRS 0136, Bât. 11C, Campus de Beaulieu, F-35042 Rennes Cédex, France
B. Lépine: Laboratoire de Spectroscopie du Solide, ERS CNRS 0136, Bât. 11C, Campus de Beaulieu, F-35042 Rennes Cédex, France
R. Pingel: Laboratoire de Spectroscopie du Solide, ERS CNRS 0136, Bât. 11C, Campus de Beaulieu, F-35042 Rennes Cédex, France
A. Godefroy: Laboratoire de Spectroscopie du Solide, ERS CNRS 0136, Bât. 11C, Campus de Beaulieu, F-35042 Rennes Cédex, France
A. Quémerais: Laboratoire de Spectroscopie du Solide, ERS CNRS 0136, Bât. 11C, Campus de Beaulieu, F-35042 Rennes Cédex, France
A. Guivarch: Laboratoire de Spectroscopie du Solide, ERS CNRS 0136, Bât. 11C, Campus de Beaulieu, F-35042 Rennes Cédex, France
G. Jézéquel: Laboratoire de Spectroscopie du Solide, ERS CNRS 0136, Bât. 11C, Campus de Beaulieu, F-35042 Rennes Cédex, France

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 285-288

Abstract: Co ultrathin films of increasing thickness (1–40 ML) are deposited on MBE grown GaAs(001) (As2×4) substrates at RT and 200°C and studied by integrated photoemission and photoelectron diffraction. Co appears to grow on a reocted layer whose thickness strongly depends on deposition temperature (up to 4 nm at 200°C). This interfacial reacted layer appears to exhibit a layered structure composed of two compounds.

Date: 1998
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DOI: 10.1142/S0218625X98000529

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