Photoemission Study of Quantum Well States in Thin ErAs Films on GaAs(100)

C. Wigren, L. Ilver, J. Kanski, P. O. Nilsson and U. O. Karlsson
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C. Wigren: Department of Synchrotron Radiation Research Institute of Physics, Lund University, S-223 62 Lund, Sweden
L. Ilver: Department of Physics, Chalmers University of Technology and Goteborg University, S-412 96 Göteborg, Sweden
J. Kanski: Department of Physics, Chalmers University of Technology and Goteborg University, S-412 96 Göteborg, Sweden
P. O. Nilsson: Department of Physics, Chalmers University of Technology and Goteborg University, S-412 96 Göteborg, Sweden
U. O. Karlsson: Department of Physics, Materials Physics, Royal Institute of Technology, S-100 44 Stockholm, Sweden

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 299-303

Abstract: Quantum well states in very thin epitaxial ErAs layers on GaAs(100) have been found in angle-resolved photoelectron spectra. From the dispersive properties of the quantum well states effective masses are obtained representing electron motion parallel to the surface layers and orthogonal to the layers.

Date: 1998
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DOI: 10.1142/S0218625X98000554

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