Band Bending and Surface States of Cs/GaAs Studied by XPS

J. Fujii, K. Tamura, S. Ishizuka, T. Sato and T. Mizoguchi
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J. Fujii: Faculty of Science, Gakushuin University, Tokyo 171, Japan
K. Tamura: Faculty of Science, Gakushuin University, Tokyo 171, Japan
S. Ishizuka: Faculty of Science, Gakushuin University, Tokyo 171, Japan
T. Sato: Faculty of Science, Gakushuin University, Tokyo 171, Japan
T. Mizoguchi: Faculty of Science, Gakushuin University, Tokyo 171, Japan

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 305-307

Abstract: Photocurrent and work function of Cs/GaAs and band denging at the interface are measured at room temperature for p-type GaAs clean surfaces with different surface treatments [cleaved GaAs(110); sulfur-passivated GaAs(001); GaAs(001) cleaned byAr+ion bombardment and annealing]. The photoemission intensity depends on the initial surface treatments of GaAs. Both work function and band bending which influence the photoemission intensity also depend on the surface treatments and the behavior of photoemission intensity is qualitatively explained by them.

Date: 1998
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DOI: 10.1142/S0218625X98000566

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