Determination of the α-Ai2O3(0001) Surface Relaxation and Termination by Measurements of Crystal Truncation Rods

P. Guénard, G. Renaud, A. Barbier and M. Gautier-Soyer
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P. Guénard: CEA/Grenoble, Département de Recherche Fondamentale sur la Matière Condensée, Grenoble, France
G. Renaud: CEA/Grenoble, Département de Recherche Fondamentale sur la Matière Condensée, Grenoble, France
A. Barbier: CEA/Grenoble, Département de Recherche Fondamentale sur la Matière Condensée, Grenoble, France
M. Gautier-Soyer: CEA/Saclay, Département de Recherche sur l'Etat Condensé, les Atomes et Molécules, Gif-sur-Yvette, France

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 321-324

Abstract: We have investigated the unreconstructed (0001) surface structure of sapphire (α-Al2O3) by grazing incidence X-ray scattering. Modulations along the crystal truncation rods were analyzed in order to determine the chemical nature of the terminating plane, and the structural relaxations of the first few atomic planes below the surfoce. The most likely model yields a single Al layer termination with relaxations of the first four planes of-51%,+16%,-29%and+20%respectively. These results compare well with the most recent theoretical calculations on this surface.

Date: 1998
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DOI: 10.1142/S0218625X98000591

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