Growth and Analysis of Red, Green and Blue Luminescent Oxide Thin Films

G. A. Hirata, J. Mckittrick and D. Devlin
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G. A. Hirata: Centro de Ciencias de la Materia Condensada-UNAM, Ensenada, B. C. 22860, Mexico
J. Mckittrick: AMES Department and Materials Science Program, University of California at San Diego, La Jolla, CA 92093 0411, USA
D. Devlin: MST Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 413-417

Abstract: The growth and characterization of europium (Eu3+) and terbium (Tb3+) doped yttrium aluminum garnet (Y3Al5O12or YAG) and undopedZnGa2O4photoluminescent thin films deposited on sapphire substrates at 400°C by excimer pulsed laser ablation is reported. Smooth, continuous 500-nm-thick amorphous films were produced with compositions depleted in oxygen. Luminescence measurements on the as-deposited and on annealed samples revealed that heat treatments at temperatures > 800°C were necessary to induce crystallization and reoxygenate, which coincided with the onset of luminescence. Annealing produced randomly oriented grains on the order of 15-200 nm.

Date: 1998
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DOI: 10.1142/S0218625X98000761

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