Cleavage Planes inCuInSe2

Z. A. Shukri and C. H. Champness
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Z. A. Shukri: Department of Electrical Engineering, McGill University, 3480 University Street, Montreal, P. Q., Canada H3A-2A7, Canada
C. H. Champness: Department of Electrical Engineering, McGill University, 3480 University Street, Montreal, P. Q., Canada H3A-2A7, Canada

Surface Review and Letters (SRL), 1998, vol. 05, issue 01, 419-422

Abstract: All angles between facets inCuInSe2Bridgman-grown crystals were measured and confirmed, by X-ray Laue patterns and diffractometry, to be accounted for by three planes: {101}, {112} and {110}. The {110} facets were less frequent and were found to consist of {112} microcleavages. The {101} cleavages occurred most frequently and it is speculated that this is due to the smaller energy required to break a smaller number of the stronger Se–Cu bonds (compared with the weaker Se–In bonds) than for {112} cleavages.

Date: 1998
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DOI: 10.1142/S0218625X98000773

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