ZnSeGrowth on Lattice-MatchedInxGa1-xAsSubstrates

S. Heun, R. Lantier, J. J. Paggel, L. Sorba, S. Rubini, B. Bonanni, A. Franciosi, M. Lomascolo, R. Cingolani, J.-M. Bonard and J.-D. Ganière
Additional contact information
S. Heun: Laboratorio Nazionale TASC-INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy
R. Lantier: Laboratorio Nazionale TASC-INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy
J. J. Paggel: Laboratorio Nazionale TASC-INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy
L. Sorba: Laboratorio Nazionale TASC-INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy
S. Rubini: Laboratorio Nazionale TASC-INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy
B. Bonanni: Laboratorio Nazionale TASC-INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy
A. Franciosi: Laboratorio Nazionale TASC-INFM, Area di Ricerca, Padriciano 99, I-34012 Trieste, Italy
M. Lomascolo: Dipartimento di Scienza dei Materiali, Università di Lecce, Via Arnesano, I-73100 Lecce, Italy
R. Cingolani: Dipartimento di Scienza dei Materiali, Università di Lecce, Via Arnesano, I-73100 Lecce, Italy
J.-M. Bonard: Institut de Micro- et Optoélectronique, Département de Physique, Ecole Polytechnique Fédérale, CH-1015 Lausanne, Switzerland
J.-D. Ganière: Institut de Micro- et Optoélectronique, Département de Physique, Ecole Polytechnique Fédérale, CH-1015 Lausanne, Switzerland

Surface Review and Letters (SRL), 1998, vol. 05, issue 03n04, 693-700

Abstract: The properties of ZnSe epilayers fabricated by molecular beam epitaxy on lattice-matchedInxGa1-xAsbuffers grown on GaAs(001) substrates have been investigated by means of photoluminescence spectroscopy and transmission electron microscopy. For suitable values ofxand ternary-layer thickness, the partial character of the strain relaxation within the III–V layer can be compensated for, minimizing the residual strain in the ZnSe overlayer. Large reductions in the dislocation density and Y-line emission as compared to conventional ZnSe/GaAs heterostructures can be reproducibly obtained.

Keywords: 68.35; 68.55; 73.40.L; 79.60.E (search for similar items in EconPapers)
Date: 1998
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DOI: 10.1142/S0218625X98001055

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