Interface Structure and Preferred Orientation of Ag/Si(111) Revealed by X-Ray Diffraction

Koichi Akimoto, Melania Lijadi, Shingo Ito and Ayahiko Ichimiya
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Koichi Akimoto: Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
Melania Lijadi: Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
Shingo Ito: Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan
Ayahiko Ichimiya: Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-01, Japan

Surface Review and Letters (SRL), 1998, vol. 05, issue 03n04, 719-722

Abstract: We studied buried interface structures of${\rm Ag/Si(111)}\sqrt{3}\mbox{-}{\rm Ag}$and Ag/Si(111)-(7 × 7) samples using grazing incidence X-ray diffraction with synchrotron radiation. We also measured the crystal orientation of the Ag overlayers of the samples. Of the numerous$\sqrt{3}$structures, only boron-induced$\sqrt{3}$structure has been detected in buried interfaces. We studied the buried interface superstructure of Ag(26 nm thick)/${\rm Ag/Si(111)}\sqrt{3}\mbox{-}{\rm Ag}$, and detected a$\sqrt{3}$fractional order reflection peak. This means that the$\sqrt{3}$structure remained at the interface. Our results for the crystal orientation of the Ag overlayers of${\rm Ag/Si(111)}\sqrt{3}\mbox{-}{\rm Ag}$showed that Ag{110}, Ag{100} and Ag{111} planes were grown on the surface. By measuring several samples prepared at various substrate temperatures, (290–370 K), we found a strong correlation between the appearance of interface$\sqrt{3}$structure and the growth of the Ag{110} plane. In contrast, our results for the crystal orientation of the Ag overlayers of Ag(26 nm thick)/Si(111)-(7 × 7) showed that only the Ag{111} plane was grown on the surface.

Date: 1998
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DOI: 10.1142/S0218625X98001080

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