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Surface Structures and Growth Mode of Cu/Si(100) Surfaces Observed by Scanning Tunneling Microscopy

H. Itoh, T. Ann, T. Kawasaki and T. Ichinokawa
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H. Itoh: Department of Applied Physics, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo 169, Japan
T. Ann: Department of Applied Physics, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo 169, Japan
T. Kawasaki: Department of Applied Physics, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo 169, Japan
T. Ichinokawa: Department of Applied Physics, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo 169, Japan

Surface Review and Letters (SRL), 1998, vol. 05, issue 03n04, 747-753

Abstract: The surface structures and growth mode of the Cu/Si(100) quenched surfaces have been studied by low energy electron diffraction (LEED) and scanning tunneling microscopy (STM), and the superstructures of 6 × 2, 2 × 2 and c(12 × 10) were observed by LEED mixed with 2 × 1. The combination of these structures depends on segregated Cu coverage which is a function of quenching temperature and deposited Cu coverage. These structures have been analyzed by STM and it has been found that 6 × 2 is an ordered structure of Si missing dimmer defects and 2 × 2 and c(12 × 10) are structures formed by Cu–Si layers with incorporation of Cu atoms into the Si(100) surface. The c(12 × 10) structure was analyzed in detail by STM with changing bias voltage, and a result of the structure model of c(12 × 10) has been proposed, The superstructures on the Cu/Si(100) surfaces do not grow homogeneously, and form the combined domains of these structures, Such a growth mode depending on Cu coverage and quenching temperature is discussed referring to the other metal surfaces on Si.

Date: 1998
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DOI: 10.1142/S0218625X98001122

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