Relaxation of Nanostructures on the Si(111)(7×7) Surface by High Temperature Scanning Tunneling Microscopy

Ayahiko Ichimiya, Yoriko Tanaka and Kazuhiko Hayashi
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Ayahiko Ichimiya: Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya, 464-01, Japan
Yoriko Tanaka: Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya, 464-01, Japan
Kazuhiko Hayashi: Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya, 464-01, Japan

Surface Review and Letters (SRL), 1998, vol. 05, issue 03n04, 821-832

Abstract: Single silicon islands have been produced on the Si(111)(7 × 7) surface by a scanning tunneling microscope (STM) tip. Thermal relaxation of the isolated islands is observed by temperature variable scanning tunneling microscopy with strong tip effects. The sizes of islands depend on timetwith a functional form of(t0-t)α. It is found thatα≃2/3for single bilayer islands, andα≃1for three-dimensional ones. During the decomposition of three-dimensional islands, step bunching of over-layers takes place, while the islands have certain facets, like a pyramid just after the creation. At the final stages of the three-dimensional island decompositions, two-dimensional ones with 5 × 5 structure always appear. We have found that characteristic 5 × 5 islands with a long lifetime are formed during relaxation, but the 7 × 7 islands have mostlt a short lifetime. Rotation of small islands is also observed during relaxation. We discuss the results in terms of two-dimensional vapor phase processes.

Keywords: 61.61.Ch; 68.35.Bs; 68.35.Ja; 68.55.Eg (search for similar items in EconPapers)
Date: 1998
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DOI: 10.1142/S0218625X98001195

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