Prefactor and Step Edge Barrier Determination for Initerlayer Diffusion in Homoepitaxial Systems: Ag/Ag(111)

K. R. Roos and M. C. Tringides ()
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K. R. Roos: Department of Physics, Bradley University, Peoria, IL 61625, USA
M. C. Tringides: Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, IA 50011, USA

Surface Review and Letters (SRL), 1998, vol. 05, issue 03n04, 833-840

Abstract: Interlayer diffusion is controlled by the probability that an atom will hop from a higher to a lower level. This probability depends on the additional step edge barrierΔEswhich an atom experiences at a step because of the lower coordination as it moves over the barrier, and possibly on the different prefactorsνs,νtfor an atom at the step versus one at a terrace position. It is important to develop experimental methods that separate out the two contributions. We have reanalyzed the STM-based method,1which measures the fraction of islands with second layer occupation at different deposition temperatures, to show how the two contributions can be identified. In addition, we have developed a diffraction-based method that measures the step density of nucleated islands as they compete for atom capture with the steps at the perimeter of the terraces. RHEED experiments on Ag/Ag(111) result inΔEs=0.15±0.03eV andνs/νt=2.3×102±0.2, in good agreement with the results,ΔEs=0.13±0.03eV andνs/νt=103±0.3, deduced from the data of Ref. 1.

Date: 1998
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DOI: 10.1142/S0218625X98001201

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