Bismuth on GaSb(110): Structural Determination of the1×1and1×2Phases by Surface X-Ray Diffraction

L. Lottermoser, T. Van Gemmeren, O. Bunk, R. L. Johnson, E. Landemark, D. Smilgies, M. Nielsen and R. Feidenhans'l
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L. Lottermoser: II. Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, D-22761 Hamburg, Germany
T. Van Gemmeren: II. Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, D-22761 Hamburg, Germany
O. Bunk: II. Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, D-22761 Hamburg, Germany
R. L. Johnson: II. Institut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, D-22761 Hamburg, Germany
E. Landemark: Risø National Laboratory, DK-4000 Roskilde, Denmark
D. Smilgies: Risø National Laboratory, DK-4000 Roskilde, Denmark
M. Nielsen: Risø National Laboratory, DK-4000 Roskilde, Denmark
R. Feidenhans'l: Risø National Laboratory, DK-4000 Roskilde, Denmark

Surface Review and Letters (SRL), 1998, vol. 05, issue 05, 1043-1052

Abstract: The surface geometry of the1×1and1×2phases of bismuth on GaSb(110) has been determined using surface X-ray diffraction with synchrotron radiation. The bismuth atoms form zigzag chains along the$[1\bar{1}0]$direction of the substrate. For the1×1phase four different registries of the bismuth chains with respect to the GaSb(110) substrate are possible. It was found that only the epitaxial continued layer structure was in good agreement with the experimental data. In the1×2reconstruction every second zigzag chain in the uppermost substrate layer is missing. The reconstructed surface is terminated with a full monolayer of Bi atoms which also form zigzag chains. The Bi atoms in the chains bond alternately to the first and second layer substrate atoms and the Bi chains are inclined at 34° to the surface. This new structural model explains the higher thermal stability of the1×2phase compared to that of the1×1phase.

Date: 1998
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DOI: 10.1142/S0218625X98001419

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