Quantitative Analysis of the Evolution of Surface Growth Morphology in LEEM
J. B. Hannon,
G. L. Kellogg,
M. C. Bartelt and
N. C. Bartelt
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J. B. Hannon: Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
G. L. Kellogg: Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
M. C. Bartelt: Sandia National Laboratories, Livermore, California 94551, USA
N. C. Bartelt: Sandia National Laboratories, Livermore, California 94551, USA
Surface Review and Letters (SRL), 1998, vol. 05, issue 06, 1151-1158
Abstract:
We describe Monte Carlo simulations and diffusion equation analysis which are useful in deriving kinetic parameters from low energy electron microscopy experiments. An analysis of the etching of the Si(001) surface with molecular oxygen is made, illustrating the power of these techniques.
Date: 1998
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Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:05:y:1998:i:06:n:s0218625x98001481
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DOI: 10.1142/S0218625X98001481
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