LEEM Measurements of Step Energies at the (001) Surface of Heavily Boron-Doped Silicon

J. B. Hannon, B. S. Swartzentruber, G. L. Kellogg and N. C. Bartelt
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J. B. Hannon: Sandia National Laboratories, Albuquerque, NM 87185-1413, USA
B. S. Swartzentruber: Sandia National Laboratories, Albuquerque, NM 87185-1413, USA
G. L. Kellogg: Sandia National Laboratories, Albuquerque, NM 87185-1413, USA
N. C. Bartelt: Sandia National Laboratories, Livermore, CA 94551, USA

Surface Review and Letters (SRL), 1998, vol. 05, issue 06, 1159-1165

Abstract: We have used the low energy electron microscope (LEEM) to investigate step faceting and striped phase formation on heavily boron-doped Si(001) surfaces. Measurements of thermal fluctuations along the steps, equilibrium island shapes, and the angle of triangular facets provide quantitative information on the step formation energies. We find that a simple, systematic temperature dependence of the spatial anisotropy of the free energy of isolated steps is sufficient to account for the observed faceting of the B type steps. These results suggest that the proliferation of straight A step edges at lower temperature is caused by the energy of isolated A steps becoming vanishingly small. We show that rapid cooling of the samples leads to the nucleation and growth of a high density of vacancy islands on the surfaces. Based on these results, we propose a qualitative model for mass transport during stripe formation.

Date: 1998
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DOI: 10.1142/S0218625X98001493

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