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IN SITUHALL MEASUREMENTS OF MACROSCOPIC ELECTRICAL PROPERTIES OF CHROMIUM-COVEREDSi(111)SURFACES

N. G. Galkin, D. L. Goroshko, A. V. Konchenko, V. A. Ivanov and A. S. Gouralnik
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N. G. Galkin: Institute for Automation and Control Processes, Far Eastern Division of the Russian Academy of Sciences, 690041, Vladivostok, Russian Federation, Russia;
D. L. Goroshko: Institute for Automation and Control Processes, Far Eastern Division of the Russian Academy of Sciences, 690041, Vladivostok, Russian Federation, Russia
A. V. Konchenko: Institute for Automation and Control Processes, Far Eastern Division of the Russian Academy of Sciences, 690041, Vladivostok, Russian Federation, Russia
V. A. Ivanov: Institute for Automation and Control Processes, Far Eastern Division of the Russian Academy of Sciences, 690041, Vladivostok, Russian Federation, Russia;
A. S. Gouralnik: Institute for Automation and Control Processes, Far Eastern Division of the Russian Academy of Sciences, 690041, Vladivostok, Russian Federation, Russia

Surface Review and Letters (SRL), 1999, vol. 06, issue 01, 7-12

Abstract: The firstin situHall measurements of the ordered chromium surface phases on Si(111) substrate and CrSi(111) epitaxial films after their formation are presented. Formation ofSi(111)-(1× 1)-Cr(0.1 nm Cr) and Si(111)-[(${\sqrt 3}\times {\sqrt 3}$)/30°]-Cr (0.3 nm Cr) surface phases results in an increase in the sheet resistivity of Si(111)-Cr surface phase samples. The conductivities along the surface phases at these chromium thicknesses are very low. The conductivity decrease is caused by a decrease in the electron mobility in the surface phase layers. Formation of an epitaxial CrSi(111) layer with averaged Hall parameters (hole mobility of440cm2·V-1·s-1, sheet resistivity of2.2·104Ω-1and sheet hole concentration of0.65·1012cm-2) has been observed at 1.5–1.8 nm of chromium thickness.

Date: 1999
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DOI: 10.1142/S0218625X99000032

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