SILICON OXIDE DECOMPOSITION AND DESORPTION DURING THE THERMAL OXIDATION OF SILICON

D. Starodub, E. P. Gusev, E. Garfunkel and T. Gustafsson
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D. Starodub: Departments of Chemistry and Physics, and Laboratory for Surface Modification, Rutgers University, Piscataway, NJ 08854-8087, USA
E. P. Gusev: Departments of Chemistry and Physics, and Laboratory for Surface Modification, Rutgers University, Piscataway, NJ 08854-8087, USA
E. Garfunkel: Departments of Chemistry and Physics, and Laboratory for Surface Modification, Rutgers University, Piscataway, NJ 08854-8087, USA
T. Gustafsson: Departments of Chemistry and Physics, and Laboratory for Surface Modification, Rutgers University, Piscataway, NJ 08854-8087, USA

Surface Review and Letters (SRL), 1999, vol. 06, issue 01, 45-52

Abstract: The thermal oxidation of silicon is normally considered to occur via two different routes. At higherO2pressures and lower temperatureSiO2(s)film growth occurs ("passive" oxidation), while at lowerO2pressures and higher temperature SiO(g) is desorbed in an etching process ("active" oxidation). We have measured the yield of SiO into the gas phase in a wide range of dryO2pressures (10-7–10-5Torr) and Si substrate temperatures (620–870°C) in the passive as well as the active oxidation regimes. A phase diagram for silicon oxidation in this pressure–temperature region is obtained. We have found evidence for small but measurable yields of SiO(g) desorbing from the nascent oxide film during the initial stages of passive oxidation, even when the oxide film continuously covers the surface. A sensitive method for detecting volatile products based on condensation of desorbed species is described.

Date: 1999
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DOI: 10.1142/S0218625X99000081

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