ENERGETICS OF BORON IN THESi(111)-$(\sqrt{3}\times \sqrt{3})$-B SURFACE PHASE AND IN SUBSURFACE SILICON LAYERS

V. G. Zavodinsky (), E. N. Chukurov and I. A. Kuyanov
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V. G. Zavodinsky: Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Str., 690041 Vladivostok, Russia;
E. N. Chukurov: Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Str., 690041 Vladivostok, Russia;
I. A. Kuyanov: Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Str., 690041 Vladivostok, Russia

Surface Review and Letters (SRL), 1999, vol. 06, issue 01, 127-132

Abstract: The energetics of the boron substitution in the B/Si(111)-$({$\sqrt{3}\times \sqrt{3}$})$surface phase and in subsurface silicon layers has been studied using the semiempirical cluster method AM1. It has been found that the boron energy in the second layer (theB-S5site) is about 1 eV lower than in the adatom position (theB-T4site) and about 2 eV lower than in the fourth bulklike layer. The latter value may be interpreted as the surface segregation energy (enthalpy). The barrier height for theB-T4–B-S5transfer has been found to be about 0.7 eV.

Date: 1999
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DOI: 10.1142/S0218625X99000159

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