BEHIND THE QUANTUM CONFINEMENT AND SURFACE PASSIVATION OF NANOCLUSTERS

Chang Q. Sun (), H. Q. Gong, P. Hing and H. T. Ye
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Chang Q. Sun: Gintic Institute of Manufacturing Technology, Advanced Materials Research Center, Nanyang Technological University, Singapore 639798, Singapore
H. Q. Gong: School of Mechanical Production Engineering, Advanced Materials Research Center, Nanyang Technological University, Singapore 639798, Singapore
P. Hing: Gintic Institute of Manufacturing Technology, Advanced Materials Research Center, Nanyang Technological University, Singapore 639798, Singapore;
H. T. Ye: Gintic Institute of Manufacturing Technology, Advanced Materials Research Center, Nanyang Technological University, Singapore 639798, Singapore;

Surface Review and Letters (SRL), 1999, vol. 06, issue 02, 171-176

Abstract: A new model is presented to describe the quantum confinement and surface passivation effects of nanoclusters. The quantum well depth(ϕ)and the band gap width(Eg)of nanoclusters are independent concepts, because the ϕ depends on the surface electron density while theEgis a function of the crystal field of the solid. TheϕandEgcan be correlated with the joint physical and chemical effects, which are quite simple but have rarely been noticed. It is suggested that the bond contraction at the surface and the rise in the surface-to-volume ratio(γ), as well as the cluster interaction, enhanceintrinsicallythe crystal field and hence the band gapEg. Reaction with electronegative elements, such as oxygen and nitrogen, widensextrinsicallytheEgby producing holes below the Fermi level [Appl. Phys. Lett.72, 1706 (1998)]. The formulation agrees well with experimental observations on the band gap enlargement by reducing particle size.

Keywords: 64.60.Qb; 64.70.Kb; 68.35.Md (search for similar items in EconPapers)
Date: 1999
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DOI: 10.1142/S0218625X99000196

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