SCANNING TUNNELING MICROSCOPY INVESTIGATION OF THESi(103)-(1 × 1)–InSURFACE

Zheng Gai, W. S. Yang, Q.-K. Xue, T. Sakurai and R. G. Zhao
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Zheng Gai: The Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577, Japan;
W. S. Yang: The Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577, Japan;
Q.-K. Xue: The Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577, Japan
T. Sakurai: The Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577, Japan
R. G. Zhao: Department of Physics and the Laboratory for Mesoscopic Physics, Peking University, Beijing 100871, China

Surface Review and Letters (SRL), 1999, vol. 06, issue 03n04, 405-409

Abstract: In view of the special importance of the IV(103)-(1× 1)–III surface structures to the III/IV interfacial systems, in this paper the atomic structure of the Si(103)-(1× 1)–In surface is studied by means of scanning tunneling microscopy. The model that contains an indium and a silicon adatom in a unit cell, which has passed the test of low energy electron diffraction calculations, is confirmed to be correct. The dangling bond of the silicon adatom is found to be essentially empty.

Date: 1999
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DOI: 10.1142/S0218625X9900041X

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