ATOMIC LAYER DEPOSITION OFSiO2USING CATALYZED AND UNCATALYZED SELF-LIMITING SURFACE REACTIONS

J. W. Klaus, O. Sneh, A. W. Ott and S. M. George
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J. W. Klaus: Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO 80309, USA
O. Sneh: Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO 80309, USA
A. W. Ott: Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO 80309, USA
S. M. George: Department of Chemistry and Biochemistry, University of Colorado, Boulder, CO 80309, USA

Surface Review and Letters (SRL), 1999, vol. 06, issue 03n04, 435-448

Abstract: SiO2thin films were deposited with atomic layer control using self-limiting surface reactions. TheSiO2growth was achieved by separating the binary reactionSiCl4+2H2O→SiO2+4HClinto two half-reactions. Successive application of the half-reactions in an ABAB… sequence produced atomic-layer-controlledSiO2deposition.SiO2films were grown at temperatures of 600–800 K, withSiCl4andH2Oreactant exposures of~109L (1 L= 10-6Torr s). Employing pyridine (C5H5N) as a catalyst, theSiO2films could be deposited at much lower temperatures and reactant exposures. The pyridine catalyst lowered the requiredSiO2deposition temperature from 600 K to 300 K and reduced the reactant exposure required for complete reactions from~109L to~ 104L. In addition, theSiO2growth rates increased from 0.75 Å per AB cycle at 800 K to 2.1 Aring; per AB cycle at 300 K. The deposited films were stoichiometricSiO2and were extremely flat, with a roughness nearly identical to the initial substrate surface. The films also displayed dielectric breakdown strengths similar to thermally depositedSiO2films. The ability to deposit conformalSiO2thin films with atomic layer control over a wide range of temperatures should find numerous applications in thin film device fabrication.

Date: 1999
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DOI: 10.1142/S0218625X99000433

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