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GROWTH AND STRUCTURE OFhcpTiFILMS ON Al(111) SURFACES

Y. W. Kim, G. A. White, N. R. Shivaparan, M. A. Teter and R. J. Smith ()
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Y. W. Kim: Department of Physics, Montana State University, Bozeman, Montana 59717, USA
G. A. White: Department of Physics, Montana State University, Bozeman, Montana 59717, USA
N. R. Shivaparan: Department of Physics, Montana State University, Bozeman, Montana 59717, USA
M. A. Teter: Department of Physics, Montana State University, Bozeman, Montana 59717, USA
R. J. Smith: Department of Physics, Montana State University, Bozeman, Montana 59717, USA

Surface Review and Letters (SRL), 1999, vol. 06, issue 05, 775-780

Abstract: The structure of thin Ti films grown on Al(111) surfaces at room temperature has been studied using high energy ion scattering/channeling (HEIS), X-ray photoelectron spectroscopy (XPS), low energy ion scattering (LEIS), low energy electron diffraction (LEED) and X-ray photoelectron diffraction (XPD). Our results show that Ti grows in the SK mode on the Al(111) surface. Ti atoms form a two-dimensional overlayer up to a deposition of about 2 ML Ti, followed by three-dimensional island growth with additional Ti deposition. The Ti islands cover the surface completely at about 12 ML of Ti deposition. XPD results show that the Ti overlayer has a well-ordered hcp Ti(0001) structure on the fcc Al(111) surface, in remarkable contrast to the fcc Ti film growth observed on Al(001) and Al(110) surfaces.

Date: 1999
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DOI: 10.1142/S0218625X99000780

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