DC-HEATING-INDUCED ANTIBAND FORMATION AND SUBSEQUENT STEP WANDERING ON Si(111) STUDIED BYIN-SITUREM

Masashi Degawa (), Hiroki Minoda, Yasumasa Tanishiro and Katsumichi Yagi
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Masashi Degawa: Physics Department, Tokyo Insititute of Technology, Oh-okayama, Meguro, Tokyo 152-8551, Japan
Hiroki Minoda: Physics Department, Tokyo Insititute of Technology, Oh-okayama, Meguro, Tokyo 152-8551, Japan
Yasumasa Tanishiro: Physics Department, Tokyo Insititute of Technology, Oh-okayama, Meguro, Tokyo 152-8551, Japan
Katsumichi Yagi: Physics Department, Tokyo Insititute of Technology, Oh-okayama, Meguro, Tokyo 152-8551, Japan

Surface Review and Letters (SRL), 1999, vol. 06, issue 06, 977-984

Abstract: Direct current fed through a Si crystal with (111) vicinal surfaces induces step bunching and wandering which depend on the temperature and the current direction. In the present reportin-situreflection electron microscope studies of antiband formation and the growth of step wandering are presented together with supplemental observations by scanning electron microscopy and optical microscopy. Observations were for the temperature range (about 1000–1180°C) where the step-down current induces step wandering and the step-up current induces step bunching and antiband formation and subsequent step wandering. An important role of antiband formation for step wandering in the step-up current regions is presented.

Date: 1999
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DOI: 10.1142/S0218625X99001050

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