REM STUDIES OF STEP CREATION ENERGIES AND STEP–STEP INTERACTIONS ON Si(111) AND (110) VICINAL SURFACES

T. Suzuki (), H. Minoda, Y. Tanishiro and K. Yagi
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T. Suzuki: Physics Department, Tokyo Institute of Technology, Oh-okayama, Tokyo 152-8551, Japan
H. Minoda: Physics Department, Tokyo Institute of Technology, Oh-okayama, Tokyo 152-8551, Japan
Y. Tanishiro: Physics Department, Tokyo Institute of Technology, Oh-okayama, Tokyo 152-8551, Japan
K. Yagi: Physics Department, Tokyo Institute of Technology, Oh-okayama, Tokyo 152-8551, Japan

Surface Review and Letters (SRL), 1999, vol. 06, issue 06, 985-994

Abstract: We carried out reflection electron microscope (REM) observations of equilibrium shapes of Si(111) and (110) vicinal surfaces to estimate step creation energies and step interaction coefficients. A sample with a cylindrical hole was annealed at 1050°C under AC or DC heating. We measured widths of the facet surfaces and step positions on the vicinal surfaces and estimated the ratios of the step creation energies(B)and the step interaction coefficients(g)of these surfaces. We found that repulsive step–step interaction was stronger on the (110) surfaces than on the (111) surfaces, effective repulsive step–step interactions on both surfaces annealed by DC heating were stronger than those on surfaces annealed by AC heating, and the DC heating effect appeared more strongly on the (111) surfaces than on the (110) surfaces.

Date: 1999
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DOI: 10.1142/S0218625X99001062

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