DOMAIN GROWTH OF THE DAS STRUCTURE ON A QUENCHED Si(111) SURFACE STUDIED BY STM

Wataru Shimada, Hiroshi Tochihara (), Tomoshige Sato and Masashi Iwatsuki
Additional contact information
Wataru Shimada: Department of Molecular and Material Sciences, Kyushu University, Kasuga 816-8580, Japan
Hiroshi Tochihara: Department of Molecular and Material Sciences, Kyushu University, Kasuga 816-8580, Japan
Tomoshige Sato: JEOL Ltd., 3-1-2 Musashino, Akishima, Tokyo 196-8558, Japan
Masashi Iwatsuki: JEOL Ltd., 3-1-2 Musashino, Akishima, Tokyo 196-8558, Japan

Surface Review and Letters (SRL), 1999, vol. 06, issue 06, 995-1001

Abstract: We continuously observed the growth of the dimer–adatom–stacking-fault (DAS) domain, in unreconstructed regions remaining after quenching a Si(111) surface to 370–380°C, by using scanning tunneling microscopy. It was observed that a single faulted (F) half of the9×9unit cell of the DAS structure grows to a small9×9DAS domain. Continuous measurements showed that new F-halves are created sharing corner holes with existing F-halves. The creation of new isolated F-halves was very seldom at 370–380°C, and the region of the DAS structure was grown by expanding the area of the existing DAS domains.

Date: 1999
References: Add references at CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X99001074
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:06:y:1999:i:06:n:s0218625x99001074

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X99001074

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().