PHOTOELECTRON DIFFRACTION STUDY OF THE INITIAL-STAGE GROWTH OF CuONGe(111)-c(2×8)

S. Omori (), A. Narimatsu, T. Suzuki and Y. Nihei
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S. Omori: Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
A. Narimatsu: Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
T. Suzuki: Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
Y. Nihei: Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan

Surface Review and Letters (SRL), 1999, vol. 06, issue 06, 1079-1083

Abstract: Two phases in the initial stages of Cu growth on Ge(111) have been investigated by using X-ray photoelectron diffraction (XPED). Multiple-scattering analysis showed that the surface layer of the discommensurate phase consists of almost the same amount of two kinds of domains with regular and fault stackings. Furthermore, it was found that the ordered overlayer was formed after annealing the discommensurate phase and that the XPED pattern from the annealed phase cannot be explained by the simple models such as bulklike Cu and stoichiometric germanideCu3Ge.

Date: 1999
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DOI: 10.1142/S0218625X99001189

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