EPITAXIAL GROWTH OFSrF2ONGe(111)-c(2×8)AS STUDIED BY PHOTOELECTRON DIFFRACTION AND HOLOGRAPHY

S. Omori (), T. Kozakai and Y. Nihei
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S. Omori: Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
T. Kozakai: Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan
Y. Nihei: Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106-8558, Japan

Surface Review and Letters (SRL), 1999, vol. 06, issue 06, 1085-1089

Abstract: We have investigated the photoelectron diffraction (PED) from aSrF2epitaxial thin film on Ge(111) from the viewpoint of holographic inversion for imaging the atomic structure. The holographic interference fringes were retrieved from the PED pattern including a wide variety of diffraction features via averaging the pattern around each forward-scattering peak. Furthermore, another method for enhancing holographic fringes by subtracting one photoelectron hologram from another at slightly different kinetic energies was theoretically investigated.

Date: 1999
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DOI: 10.1142/S0218625X99001190

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