PHOTOELECTRON DIFFRACTION STUDY OF THE(3×3)-Sn/Ge(111)STRUCTURE

L. Floreano (), L. Petaccia, M. Benes, D. Cvetko, A. Goldoni, R. Gotter, L. Grill, A. Morgante, A. Verdini and S. Modesti
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L. Floreano: Laboratorio TASC dell'Istituto Nazionale per la Fisica della Materia, Padriciano 99, I-34012 Trieste, Italy
L. Petaccia: Laboratorio TASC dell'Istituto Nazionale per la Fisica della Materia, Padriciano 99, I-34012 Trieste, Italy
M. Benes: Department of Physics, University of Trieste, Via Valerio 2, I-34100 Trieste, Italy
D. Cvetko: Sincrotrone Trieste, Padriciano 99, I-34012 Trieste, Italy;
A. Goldoni: Sincrotrone Trieste, Padriciano 99, I-34012 Trieste, Italy
R. Gotter: Laboratorio TASC dell'Istituto Nazionale per la Fisica della Materia, Padriciano 99, I-34012 Trieste, Italy
L. Grill: Laboratorio TASC dell'Istituto Nazionale per la Fisica della Materia, Padriciano 99, I-34012 Trieste, Italy
A. Morgante: Laboratorio TASC dell'Istituto Nazionale per la Fisica della Materia, Padriciano 99, I-34012 Trieste, Italy;
A. Verdini: Laboratorio TASC dell'Istituto Nazionale per la Fisica della Materia, Padriciano 99, I-34012 Trieste, Italy
S. Modesti: Laboratorio TASC dell'Istituto Nazionale per la Fisica della Materia, Padriciano 99, I-34012 Trieste, Italy;

Surface Review and Letters (SRL), 1999, vol. 06, issue 06, 1091-1096

Abstract: The photoemission spectra of the Sn4delectrons from the (3×3)-Sn/Ge(111) surface present two components which are attributed to inequivalent Sn atoms in T4 bonding sites. This structure has been explored by photoelectron diffraction experiments performed at the ALOISA beamline of the Elettra storage ring in Trieste (Italy). The modulation of the intensities of the two Sn components, caused by the backscattering of the underneath Ge atoms, has been measured as a function of the emission angle at fixed kinetic energies and vice versa. The bond angle between Sn and its nearest neighbor atoms in the first Ge layer (Sn–Ge1) has been measured by taking polar scans along the main symmetry directions and it was found almost equivalent for the two components. The corresponding bond lengths are also quite similar, as obtained by studying the dependence on the photoelectron kinetic energy with the photon polarization and the collection direction parallel to theSn–Ge1bond orientation (bond emission). A clear difference between the two bonding sites is observed when studying the energy dependence at normal emission, where the sensitivity to the Sn height above the Ge atom in the second layer is enhanced. The (3×3)-Sn/Ge(111) is thus characterized by a structure where the Sn atom and its three nearest neighbor Ge atoms form a rather rigid unit that presents a strong vertical distortion with respect to the underneath atom of the second Ge layer.

Date: 1999
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DOI: 10.1142/S0218625X99001207

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