STRUCTURE OFSi(001)-(4×3)-InSURFACE STUDIED BY X-RAY PHOTOELECTRON DIFFRACTION

M. Shimomura (), T. Nakamura, K.-S. Kim, T. Abukawa, J. Tani and S. Kono
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M. Shimomura: Research Institute for Scientific Measurements, Tohoku University, Sendai 980-8577, Japan
T. Nakamura: Research Institute for Scientific Measurements, Tohoku University, Sendai 980-8577, Japan
K.-S. Kim: Research Institute for Scientific Measurements, Tohoku University, Sendai 980-8577, Japan
T. Abukawa: Research Institute for Scientific Measurements, Tohoku University, Sendai 980-8577, Japan
J. Tani: Research Institute for Scientific Measurements, Tohoku University, Sendai 980-8577, Japan;
S. Kono: Research Institute for Scientific Measurements, Tohoku University, Sendai 980-8577, Japan

Surface Review and Letters (SRL), 1999, vol. 06, issue 06, 1097-1102

Abstract: X-ray photoelectron diffraction (XPD) patterns of In 3d core levels have been measured for the Si(001)-(4×3)-In surface. AnRfactor analysis with single-scattering and multiple-scattering simulations of In 3d XPD patterns was performed for three structural models proposed so far. Only the model proposed by surface X-ray diffraction [Appl. Surf. Sci.123/124, 104 (1998)] appeared to give a reasonably smallRfactor when the geometric parameters were modified from the original ones.

Date: 1999
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DOI: 10.1142/S0218625X99001219

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