THE GROWTH AND ELECTRONIC STRUCTURES OF EPITAXIALCrSi2FILMS PREPARED ON Si(111) SUBSTRATE

K. H. Kim (), J.-S. Kang and C. G. Olson
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K. H. Kim: Department of Physics, Gyeongsang National University, Chinju 660-701, Korea
J.-S. Kang: Department of Physics, The Catholic University of Korea, Pucheon 422-743, Korea
C. G. Olson: Ames Laboratory, Iowa State University, AMES, Iowa 50011, USA

Surface Review and Letters (SRL), 1999, vol. 06, issue 06, 1103-1108

Abstract: Highly epitaxialCrSi2films were grown on Si(111) substrate by Cr deposition on Si(111)-(7×7) surface at 450°C followed byin situannealing at 900–1100°C in ultrahigh vacuum.CrSi2(001)plane was grown parallel to the Si(111) plane with aCrSi2 //Si matching face relationship. The valence band (VB photoemission for the 1200-Å-thickCrSi2was measured at room temperature and 20 K by using synchrotron radiation (hν=20–120 eV). Overall shapes of the two energy distribution curves (EDC's) were similar. Two peaks were observed in the EDC's corresponding to the bonding and the nonbondingCr-dstates in theCrSi2. The onset of the VB photoemission measured at 20 K was located at about 0.32 eV below Fermi level, due to the energy band gap opening at low temperature.

Keywords: 68.55; 73.20 (search for similar items in EconPapers)
Date: 1999
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DOI: 10.1142/S0218625X99001220

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