ANGLE-RESOLVED PHOTOEMISSION STUDIES OF THE3C–SiC(001)(2×1)SURFACE

L. Duda (), L. S. O. Johansson, B. Reihl, H. W. Yeom, S. Hara and S. Yoshida
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L. Duda: Experimentelle Physik I, Universität Dortmund, D-44221 Dortmund, Germany
L. S. O. Johansson: Experimentelle Physik I, Universität Dortmund, D-44221 Dortmund, Germany
B. Reihl: Experimentelle Physik I, Universität Dortmund, D-44221 Dortmund, Germany
H. W. Yeom: Research Center for Spectrochemistry, University of Tokyo, Tokyo 113, Japan
S. Hara: Electrotechnical Laboratory, Tsukuba, Ibaraki 305, Japan
S. Yoshida: Electrotechnical Laboratory, Tsukuba, Ibaraki 305, Japan

Surface Review and Letters (SRL), 1999, vol. 06, issue 06, 1151-1157

Abstract: We have investigated the electronic structure of the single-domain 3C–SiC(001)(2×1) using angle-resolved photoemission and synchrotron radiation. Two different surface-state bands are clearly identified within the bulk bandgap. The upper band has a binding energy of 1.4 eV at the center of the surface Brillouin zone (SBZ) and shows a weak dispersion of 0.3 eV in the$\bar\Gamma -\bar J$direction, but is nondispersive in the perpendicular direction. It has a polarization dependence suggesting apzcharacter, as expected for a Si dangling-bond state. The second band is located at 2.4 eV binding energy and is nondispersive. The weak or nonexistent dispersions suggest very localized electronic states at the surface and show poor agreement with calculated dispersions for the proposed models for the2×1and c(4×2) reconstructions.

Date: 1999
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DOI: 10.1142/S0218625X9900127X

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