THERMAL DESORPTION OF SODIUM ATOMS FROM THIN SiO2Films

B. V. Yakshinskiy, T. E. Madey () and V. N. Ageev
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B. V. Yakshinskiy: Department of Physics and Astronomy, Laboratory for Surface Modification, Rutgers, The State University of New Jersey, Piscataway, NJ 08854, USA
T. E. Madey: Department of Physics and Astronomy, Laboratory for Surface Modification, Rutgers, The State University of New Jersey, Piscataway, NJ 08854, USA
V. N. Ageev: A. F. Ioffe Physical-Technical Institute, Academy of Sciences of Russia, 194021 St. Petersburg, Russia

Surface Review and Letters (SRL), 2000, vol. 07, issue 01n02, 75-87

Abstract: The adsorption and thermal desorption of Na from thin SiO2films have been studied. X-ray photoelectron spectroscopy (XPS), angle-resolved XPS (ARXPS), low energy ion scattering (LEIS), temperature-programmed desorption (TPD), low energy electron diffraction (LEED) and work function measurements have been used to characterize the growth mechanism and properties of stoichiometric SiO2films deposited onto a Re (0001) substrate. Upon deposition of Na onto SiO2at 250 K, the first monolayer of Na exhibits ionic character, and evidence of metallic Na (plasmon features in XPS) is observed for higher coverages. TPD spectra for Na from SiO2include a monolayer peak at ~700 K, and the multilayer peak due to sublimation of bulk Na at ~330 K. Penetration of Na into SiO2can be induced by heating, or by He ion bombardment of a Na/SiO2layer. The sticking probability for Na on SiO2is ~0.5 at 250 K, and it decreases at higher substrate temperatures.

Date: 2000
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DOI: 10.1142/S0218625X00000117

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