INTERFACE MAGNETIZATION EFFECT IN STRESSED SEMIMAGNETIC HETEROJUNCTIONS

N. Malkova () and V. Kantser
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N. Malkova: Institute of Applied Physics, AS of Moldova, 2028 Kishinev, Moldova
V. Kantser: Institute of Applied Physics, AS of Moldova, 2028 Kishinev, Moldova

Surface Review and Letters (SRL), 2000, vol. 07, issue 01n02, 127-134

Abstract: A model of the interface magnetization effect based on magnetic properties of the interface Tamm-like states is continuing to develop. The interface spin-polarized states of the stressed heterojunctions formed from the narrow-gap semimagnetic semiconductors with antiferromagnetic ordering are studied in the framework of the two-band envelope function approximation including far-band corrections. The effect of far-band corrections is shown to be conditioned by the mutual movement of the actual bands of the initial semiconductors, resulting in a change of the energy interval in which the interface states exist. Magnetization is expected when the Fermi level lies in one of the interface bands. By the use of appropriate parameters, the value of the relative interface magnetization is calculated.

Date: 2000
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DOI: 10.1142/S0218625X00000178

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