NEAR EDGE X-RAY ABSORPTION AND X-RAY PHOTOELECTRON DIFFRACTION STUDIES OF THE STRUCTURAL ENVIRONMENT OFGe–SiSYSTEMS

P. Castrucci, R. Gunnella, N. Pinto, R. Bernardini, M. de Crescenzi and M. Sacchi
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P. Castrucci: Sezione INFM, Dipartimento di Matematica e Fisica, Università di Camerino, 62032 Via Madonna delle Carceri, Camerino, Italy
R. Gunnella: Sezione INFM, Dipartimento di Matematica e Fisica, Università di Camerino, 62032 Via Madonna delle Carceri, Camerino, Italy
N. Pinto: Sezione INFM, Dipartimento di Matematica e Fisica, Università di Camerino, 62032 Via Madonna delle Carceri, Camerino, Italy
R. Bernardini: Sezione INFM, Dipartimento di Matematica e Fisica, Università di Camerino, 62032 Via Madonna delle Carceri, Camerino, Italy
M. de Crescenzi: Sezione INFM, Dipartimento di Matematica e Fisica, Università di Camerino, 62032 Via Madonna delle Carceri, Camerino, Italy
M. Sacchi: LURE, Laboratoire pour l'Utilisation du Rayonnement Electromagnetique, BP34, Centre Universitaire Paris-Sud, 91898 Orsay, France

Surface Review and Letters (SRL), 2000, vol. 07, issue 03, 307-331

Abstract: Near edge X-ray absorption spectroscopy (XAS), X-ray photoelectron diffraction (XPD) and Auger electron diffraction (AED) are powerful techniques for the qualitative study of the structural and electronic properties of several systems. The recent development of a multiple scattering approach to simulating experimental spectra opened a friendly way to the study of structural environments of solids and surfaces. This article reviews recent X-ray absorption experiments using synchrotron radiation which were performed at Ge L edges and core level electron diffraction measurements obtained using a traditional X-ray source from Ge core levels for ultrathin Ge films deposited on silicon substrates. Thermodynamics and surface reconstruction have been found to play a crucial role in the first stages of Ge growth on Si(001) and Si(111) surfaces. Both techniques show the occurrence of intermixing processes even for room-temperature-grown Ge/Si(001) samples and give a straightforward measurement of the overlayer tetragonal distortion. The effects of Sb as a surfactant on the Ge/Si(001) interface have also been investigated. In this case, evidence of layer-by-layer growth of the fully strained Ge overlayer with a reduced intermixing is obtained when one monolayer of Sb is predeposited on the surface.

Date: 2000
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DOI: 10.1142/S0218625X00000282

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