THE ATOMIC STRUCTURE OFSi(111)-$(\sqrt{3}\times\sqrt{3})$R30°-GaDETERMINED BY AUTOMATED TENSOR LEED

Wenhua Chen, Huasheng Wu, Wing Kin Ho, B. C. Deng, Geng Xu and S. Y. Tong
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Wenhua Chen: Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
Huasheng Wu: Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
Wing Kin Ho: Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China
B. C. Deng: Department of Basic Courses, South China Construction University, Guangzhou 510405, China
Geng Xu: Department of Physics, Zhongshan University, Guangzhou 510275, China
S. Y. Tong: Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China;

Surface Review and Letters (SRL), 2000, vol. 07, issue 03, 267-270

Abstract: The atomic structure of theSi(111)-$(\sqrt{3}\times\sqrt{3})$R30°-Ga surface has been studied by comparing measured low-energy electron diffraction (LEED) intensity (IV) curves with calculated IV spectra using the method of automated tensor LEED. The experimental LEED IV curves used in this work contain many beams and a wide energy range. The results show that the Ga atoms occupy T4sites, at 2.62 Å above the second-atomic-layer Si atoms. The Ga–Si vertical spacing is 1.44 Å and the bond length between the Ga atom and the first-layer Si atom is 2.52 Å. Large bucklings are found in the first and second Si bilayers below the adatom layer.

Date: 2000
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DOI: 10.1142/S0218625X0000035X

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