ACTIVATED STRAIN RELIEF OFGe/Si(100)ISLANDS

Jeff Drucker, Yangting Zhang, S. A. Chaparro, D. Chandrasekhar, M. R. McCartney and David J. Smith
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Jeff Drucker: Physics Department, University of Texas at El Paso, El Paso, TX 79968-0515, USA;
Yangting Zhang: Materials Research Institute University of Texas at El Paso, El Paso, TX 79968-0515, USA
S. A. Chaparro: Materials Research Institute University of Texas at El Paso, El Paso, TX 79968-0515, USA
D. Chandrasekhar: Center of Solid State Science, Arizona State University, Tempe, AZ 85287, Science, USA
M. R. McCartney: Center of Solid State Science, Arizona State University, Tempe, AZ 85287, Science, USA
David J. Smith: Center of Solid State Science, Arizona State University, Tempe, AZ 85287, Science, USA;

Surface Review and Letters (SRL), 2000, vol. 07, issue 05n06, 527-531

Abstract: Stress concentration at the boundary of Ge/Si(100) islands drives strain relief mechanisms activated at higher growth temperature,T. Si interdiffusion forT≥ 550°Cforms a reduced misfit alloy allowing specific cluster morphologies to exist at sizes greater than those for pure Ge islands. This interdiffusion also affects the pathway for island shape changes. Trenches formed at the island base result from diffusion of the most highly strained material to regions of lower strain and precede dislocation formation forT≥ 600°C.

Date: 2000
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DOI: 10.1142/S0218625X00000531

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