GROWTH AND CHARACTERIZATION OF ATOMIC AND NANOMETER SCALE WIRES ON THE SILICON SURFACE

J. Nogami ()
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J. Nogami: Department of Materials Science and Mechanics, Michigan State University, East Lansing, MI 48824, USA

Surface Review and Letters (SRL), 2000, vol. 07, issue 05n06, 555-560

Abstract: Growth of metals on semiconductor surfaces can result in the self-assembly of a variety of 1D or 2D structures whose lateral dimensions range from one atom to tens of atoms. Over this range in length scales, STM gives information about the structure, the growth behavior and the electronic properties of these small structures. STM and STS data on several different systems are presented. In addition, ongoing and future efforts to measure the transport properties of these small structures are described.

Date: 2000
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DOI: 10.1142/S0218625X00000579

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