SiTWINNING SUPERLATTICE: GROWTH OF NEW SINGLE CRYSTALSi

H. Hibino and T. Ogino
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H. Hibino: NTT Basic Research Laboratories, Atsugi, Kanagawa 243-0198, Japan
T. Ogino: NTT Basic Research Laboratories, Atsugi, Kanagawa 243-0198, Japan

Surface Review and Letters (SRL), 2000, vol. 07, issue 05n06, 631-635

Abstract: Si twinning superlattices are grown on${\rm Si}(111)(\sqrt3\times\sqrt3)\mbox{-}{\rm B}$by the repeated growth of Si layers with a unit thickness and postgrowth annealing. In order to determine the growth conditions of the Si twinning superlattice, it is essential to measure the crystallographic orientations in the surface regions during growth. Reflection high-energy electron diffraction (RHEED) is very sensitive to the surface orientation. Using the technique to estimate the fraction of the twinned layers in the grown layers by RHEED, we investigate the growth process and thermal stability of the twinned epitaxial layers. The growth of the twinning superlattices is monitored by the oscillation of the twinned layer fraction as a function of the thickness.

Date: 2000
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DOI: 10.1142/S0218625X00000609

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