A HETEROEPITAXIAL MULTI-ATOMIC-LAYER SYSTEM OF GRAPHENE ANDh-BN
C. Oshima,
N. Tanaka,
A. Itoh,
E. Rokuta,
K. Yamashita and
T. Sakurai
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C. Oshima: Department of Applied Physics, Waseda University, Okubo 3-4-1 Shinjuku, 169-8555, Japan;
N. Tanaka: Department of Applied Physics, Waseda University, Okubo 3-4-1 Shinjuku, 169-8555, Japan
A. Itoh: Department of Applied Physics, Waseda University, Okubo 3-4-1 Shinjuku, 169-8555, Japan
E. Rokuta: Department of Applied Physics, Waseda University, Okubo 3-4-1 Shinjuku, 169-8555, Japan
K. Yamashita: Department of Applied Physics, Waseda University, Okubo 3-4-1 Shinjuku, 169-8555, Japan
T. Sakurai: Institute for Material Science, Tohoku University, Katahira, Aoba, Sendai 980-8500, Japan
Surface Review and Letters (SRL), 2000, vol. 07, issue 05n06, 521-525
Abstract:
Multi-atomic-layer systems stacked with monolayer graphene/monolayerh-BN/Ni(111) have been grown in an epitaxial manner. The graphene overlayer formation changes drastically the interfacial interaction between theh-BN layer and Ni(111). As a result, a peculiar property of the monolayerh-BN on Ni(111) changes to a bulklike one. Theπ–dorbital hybridization at the interface disappears. Accordingly, a metallic character of monolayerh-BN disappears, the soft TO⊥phonon returns to the bulk one, and the reduced lattice constant ofh-BN on Ni(111) also returns to the bulk one. In contrast, theh-BN overlayer formation does not change the interface between the monolayer graphene and Ni(111). From those data, the strength order of interfacial bonds changes as follows: graphene/Ni(111) > graphene/h-BN >h-BN/Ni(111).
Date: 2000
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DOI: 10.1142/S0218625X00000683
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