MORPHOLOGICAL CONTROL OFGaNBUFFER LAYERS GROWN BY MOLECULAR BEAM EPITAXY ON6H–SiC(0001)

Changwu Hu, David J. Smith, R. B. Doak and I. S. T. Tsong
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Changwu Hu: Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504, USA
David J. Smith: Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504, USA
R. B. Doak: Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504, USA
I. S. T. Tsong: Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504, USA

Surface Review and Letters (SRL), 2000, vol. 07, issue 05n06, 565-570

Abstract: The growth of GaN buffer layers of thickness 10–25 nm directly on6H–SiC(0001)substrates was studied using low energy electron microscopy, atomic force microscopy and cross-sectional transmission electron microscopy. The Ga flux was supplied by an evaporative source, while the NH3flux came from a seeded beam supersonic jet source. By monitoring the growthin situand by suitably adjusting theGa/NH3flux ratio, smooth basal-plane-oriented GaN layers were grown on hydrogen-etched SiC substrates at temperatures in the range of 600–700°C. The growth proceeds via nucleation of small flat islands at the step edges of the6H–SiC(0001)substrate surface. The islands increase in size with a lateral-to-vertical growth ratio of ~10 and eventually coalesce into a quasicontinuous layer. A highly defective substrate surface was found to be detrimental to the growth of flat buffer layers.

Date: 2000
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DOI: 10.1142/S0218625X00000701

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