ION SCATTERING AND RECOILING SPECTROSCOPY FOR REAL TIME MONITORING OF SURFACE PROCESSES IN A GAS PHASE ATMOSPHERE

T. Fujino, M. Katayama, Y. Yamazaki, S. Inoue, J.-T. Ryu and K. Oura ()
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T. Fujino: Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
M. Katayama: Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
Y. Yamazaki: Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
S. Inoue: Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
J.-T. Ryu: Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
K. Oura: Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

Surface Review and Letters (SRL), 2000, vol. 07, issue 05n06, 657-659

Abstract: Various surface processes, such as thin film growth or etching, are usually performed by introducing various gases into a vacuum chamber. In order to monitor such surface processesin situ, we have developed an ion scattering and recoiling spectroscopy apparatus equipped with a differential pumping system. The system was applied for real time monitoring of hydrogen-mediated growth of Ge films on Si substrates under a hydrogen gas pressure of 10-4Torr.

Date: 2000
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DOI: 10.1142/S0218625X00000725

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