DYNAMIC LEEM OBSERVATION OFCUNANOSTRUCTURE FORMATION PROCESSES ONSi(111)WITH HYDROGEN

T. Yasue (), T. Koshikawa, M. Jalochowski and E. Bauer
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T. Yasue: Fundamental Electronics Research Institute and Academic Frontier, Promotion Center, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
T. Koshikawa: Fundamental Electronics Research Institute and Academic Frontier, Promotion Center, Osaka Electro-Communication University, 18-8 Hatsu-cho, Neyagawa, Osaka 572-8530, Japan
M. Jalochowski: Institute of Physics, University of Marie Curie-Sklodowska, pl M. Curie-Sklodowskiej 1, PL 20-031 Lublin, Poland
E. Bauer: Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504, USA

Surface Review and Letters (SRL), 2000, vol. 07, issue 05n06, 595-599

Abstract: Dynamic observation of the growth of Cu on clean and hydrogen-terminated Si(111) surfaces was carried out by using low energy electron microscopy (LEEM). On the clean surface, the two-dimensional "5×5" structure is formed, and the formation process of the "5×5" structure depends on the substrate temperature. Triangular islands are grown on the "5×5" structure after further deposition of Cu. On the other hand, the nanoscale islands are directly formed on the hydrogen-terminated surface below about 400°C. Above about 400°C, however, the Cu-induced desorption of hydrogen takes place, and the growth process becomes similar to that on the clean surface.

Date: 2000
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DOI: 10.1142/S0218625X00000798

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