IN-SITUHIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY STUDIES OF TWO-DIMENSIONAL ISLAND-DECAY KINETICS ON ATOMICALLY SMOOTHTiN(001)

S. Kodambaka, V. Petrova, A. Vailionis, P. Desjardins, D. G. Cahill, I. Petrov and J. E. Greene
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S. Kodambaka: Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801, USA
V. Petrova: Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801, USA
A. Vailionis: Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801, USA
P. Desjardins: Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801, USA
D. G. Cahill: Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801, USA
I. Petrov: Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801, USA
J. E. Greene: Materials Science Department and Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801, USA

Surface Review and Letters (SRL), 2000, vol. 07, issue 05n06, 589-593

Abstract: In-situhigh-temperature scanning tunneling microscopy was used to follow the coarsening (Ostwald ripening) and decay kinetics of single and multiple two-dimensional TiN islands on atomically flatTiN(001)terraces and in single-atom deep vacancy pits at temperatures of 750–950°C. The rate-limiting mechanism for island decay was found to be surface diffusion rather than adatom attachment/detachment at island edges. We have modeled island-decay kinetics based upon the Gibbs–Thomson and steady state diffusion equations to obtain a step-edge energy per unit length of 0.23±0.05 eV/Å and an activation energy for adatom formation and diffusion of 3.4±0.3 eV.

Date: 2000
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DOI: 10.1142/S0218625X00000816

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