QUANTITATIVE STUDY OF THERMAL DIFFUSION OF ELEMENTS ACROSS A ZnSe/GaAsINTERFACE USING SIMS

F. S. Gard, J. D. Riley, R. Leckey, B. F. Usher, K. Prince and P. Burke
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F. S. Gard: School of Physics, La Trobe University, Bundoora Vic. 3083, Australia
J. D. Riley: School of Physics, La Trobe University, Bundoora Vic. 3083, Australia
R. Leckey: School of Physics, La Trobe University, Bundoora Vic. 3083, Australia
B. F. Usher: School of Electronic Engineering, La Trobe University, Bundoora Vic. 3083, Australia
K. Prince: Environmental Science, ANSTO, Private Bag 1, Menai NSW 2234, Australia
P. Burke: Environmental Science, ANSTO, Private Bag 1, Menai NSW 2234, Australia

Surface Review and Letters (SRL), 2001, vol. 08, issue 01n02, 33-42

Abstract: ZnSe epilayers were grown on GaAs substrates, which had been treated with Se and Zn prior to the growth process. Thermal diffusion of elements across the interface was investigated, using secondary ion mass spectroscopy (SIMS). Ion-implanted standards have been used to calculate the "useful ion yield" for Zn and Se in the GaAs matrix and for Ga and As in the ZnSe matrix. Consequently, SIMS raw data were converted to quantified data. Diffusion of Ga atoms across the interface was observed for Zn-pretreated substrates. A comparison study showed that Se pretreatment of the GaAs substrate prevents thermal diffusion of Ga across the interface. This effect is believed to be due to the formation ofGaAsxSeylayers at the interface, which acts as a barrier to diffusion. The Ga diffusion coefficients at annealing temperatures of 400°C, 500°C and 600°C were found to be2.1×10-16cm2/s,1.9×10-15cm2/s and2.2×10-14cm-2/s, respectively. The thermal diffusion of other elements across the interface was not observed within the resolution limit of SIMS analysis.

Date: 2001
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DOI: 10.1142/S0218625X01000926

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