EconPapers    
Economics at your fingertips  
 

LOW ENERGY ELECTRON MICROSCOPY STUDIES OF THE GROWTH OF GaN ON 6H–SiC(0001)

A. Pavlovska and E. Bauer
Additional contact information
A. Pavlovska: Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504, USA
E. Bauer: Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504, USA

Surface Review and Letters (SRL), 2001, vol. 08, issue 03n04, 337-346

Abstract: The experimental possibilities and limitations of the study of the MRE growth of GaN on 6H-SiC(0001) in a low energy electron microscope are discussed. Results illustrating these possibilities and limitations are presented. We disagree with the interpretation given in a recent report on some of the results. In this paper, we present our own interpretation of the experimental data and provide the reasons why the earlier interpretation is incorrect.

Date: 2001
References: Add references at CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X01001154
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:08:y:2001:i:03n04:n:s0218625x01001154

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X01001154

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().

 
Page updated 2025-03-20
Handle: RePEc:wsi:srlxxx:v:08:y:2001:i:03n04:n:s0218625x01001154