O–Cu(001): I. BINDING THE SIGNATURES OF LEED, STM AND PES IN A BOND-FORMING WAY

Chang Q. Sun ()
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Chang Q. Sun: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

Surface Review and Letters (SRL), 2001, vol. 08, issue 03n04, 367-402

Abstract: This work consists of two sequential parts, which review the advances in uncovering the capacity of VLEED, STM and PES in revealing the nature and kinetics of oxidation bonding and its consequences for the behavior of atoms and valence electrons at a surface; and in quantifying the O–Cu(001) bonding kinetics. The first part describes the model in terms of bond making and its effect on the valence DOS and on the surface potential barrier (SPB) for surfaces with chemisorbed oxygen. One can replace the hydrogen in aH2Omolecule with an arbitrary less electronegative element and extend theM2Oto a solid surface with Goldschmidt contraction of the bond length, which formulates a specific oxidation surface with identification of atomic valences and their correpondence to the STM and PES signatures. As consequences of bond making, oxygen derives foou additional DOS features in the valence band and above, i.e. O–M bonding (~ -5 eV), oxygen nonbounding lone pairs (~ - 2 eV), holes (≤EF), and antibonding metal dipoles (≥EF), in addition to the hydrogen-bond-like formation. The evolution ofO-1toO-2transforms theCuO2pairing off-centered pyramid in thec(2× 2)-2O-1into theCU3O2pairing tetrahedron in the(2\sqrt 2\times \sqrt 2)\rm R 45^\circ-2\rm O^{-2}phase on the Cu(001) surface. The new decoding technique has enabled the model to be justified and hence the capacity of VLEED, PES and STM to be fully uncovered in determining simultaneously the bond geometry, the SPB, the valence DOS, and their interdependence.

Date: 2001
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DOI: 10.1142/S0218625X01001257

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