POROUS SILICON: INFLUENCE OF ETCHING TEMPERATURE ON MICROSTRUCTURE AND LUMINESCENCE

D. J. Blackwood and Y. Zhang
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D. J. Blackwood: Department of Materials Science, National University of Singapore, Blk S1A Lower Kent Ridge Road, Singapore 119260, Singapore
Y. Zhang: Department of Materials Science, National University of Singapore, Blk S1A Lower Kent Ridge Road, Singapore 119260, Singapore

Surface Review and Letters (SRL), 2001, vol. 08, issue 05, 429-433

Abstract: Electrochemical etching in solutions based on hydrofluoric acid has been widely used to form light-emitting porous silicon. However, the effects of a number of the experimental parameters on the quality of the porous silicon produced have yet to be fully investigated. In the present paper the influence of temperature and viscosity of the etching solution is evaluated in terms of the morphology and porosity of the porous silicon produced as well as the wavelength of the photoluminescence or electroluminescence subsequently emitted. It was found that under stimulation from a UV light source the wavelength of the photoluminescence emitted from the porous silicon films blueshifted with decreasing etching temperature. SEM and AFM investigations revealed that this blueshifting of the photoluminescence resulted from the production of smaller nanocrystals at the lower etching temperatures.

Date: 2001
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DOI: 10.1142/S0218625X0100118X

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