COMPARATIVE STUDY OF IONIZED METAL PLASMATa, TaNAND MULTISTACKEDTa/TaNSTRUCTURE AS DIFFUSION BARRIERS FORCuMETALLIZATION

C. Y. Li, Lei He, JunJie Wu, Y. Qian, L. T. Koh, B. Yu, P. D. Foo, Joseph Xie and D. H. Zhang
Additional contact information
C. Y. Li: Deep Sub-micron Integrated Circuit, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685, Singapore
Lei He: Deep Sub-micron Integrated Circuit, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685, Singapore
Y. Qian: Deep Sub-micron Integrated Circuit, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685, Singapore
L. T. Koh: Deep Sub-micron Integrated Circuit, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685, Singapore
B. Yu: Deep Sub-micron Integrated Circuit, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685, Singapore
P. D. Foo: Deep Sub-micron Integrated Circuit, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685, Singapore
Joseph Xie: Deep Sub-micron Integrated Circuit, Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, Singapore 117685, Singapore
D. H. Zhang: School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore

Surface Review and Letters (SRL), 2001, vol. 08, issue 05, 459-464

Abstract: The properties of the ion-metal-plasma (IMP) depositedTa, TaNand multistackedTa/TaNbetweenCuandSiO2have been investigated in theCu/barrier layer/SiO2/Sistructures using four-point probe, atomic force microscopy (AFM), X-ray diffraction (XRD), Rutherford back scattering (RBS), tunneling electron microscopy (TEM) and metal-pulse techniques. It was found that the multistackedTa/TaNbarrier shows the best metallurgical and thermal stability among three of them, and the superior stability is found to result mainly from the nanocrystalline microstructure rather than the density and grain size of the barrier materials. The microstructure, which contains nanocrystalline grain and amorphous-like matrix, can better retard the intermixing and diffusion ofCu, Ta, OandSiatoms, due likely to reduction of grain boundaries that are the main passway for the diffusion of these elements.

Date: 2001
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DOI: 10.1142/S0218625X01001221

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