SURFACE AND STRUCTURAL PROPERTIES OF COPPER FILMS DEPOSITED BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION FORSiTECHNOLOGY

D. H. Zhang, S. W. Loh, C. Y. Li, P. D. Foo and Joseph Xie
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D. H. Zhang: School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
S. W. Loh: School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
C. Y. Li: Institute of Microelectronics, Science Park II, Singapore 117685, Singapore
P. D. Foo: Institute of Microelectronics, Science Park II, Singapore 117685, Singapore
Joseph Xie: Institute of Microelectronics, Science Park II, Singapore 117685, Singapore

Surface Review and Letters (SRL), 2001, vol. 08, issue 05, 533-536

Abstract: The effects of a Cu flash layer deposited by the ionized metal plasma (IMP) technique on the properties of copper films deposited by metal organic chemical vapor deposition (MOCVD) are investigated. It is found that by incorporating a Cu flash layer prior to the MOCVD deposition, the surface morphology, interface, electrical conduction and structural properties of the MOCVD Cu films can be significantly improved and they also vary with the thickness of the flash copper. This observation will be very useful for copper metallization in deep submicron integrated circuits.

Date: 2001
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DOI: 10.1142/S0218625X01001269

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