RHEED AND XPS STUDIES OF THE DECOMPOSITION OF SILICON DIOXIDE BY THE BOMBARDMENT OF METAL IONS

S. J. Wang (), C. K. Ong, S. Y. Xu, P. Chen, J. W. Chai, W. C. Tjiu, J. S. Pan, A. C. H. Huan, W. Feng, J. S. Lim, W. J. Yoo and W. K. Choi
Additional contact information
S. J. Wang: Center for Superconducting and Magnetic Materials (CSMM), and Department of Physics, National University of Singapore, Singapore 119260, Singapore
C. K. Ong: Center for Superconducting and Magnetic Materials (CSMM), and Department of Physics, National University of Singapore, Singapore 119260, Singapore
S. Y. Xu: Center for Superconducting and Magnetic Materials (CSMM), and Department of Physics, National University of Singapore, Singapore 119260, Singapore
P. Chen: Center for Superconducting and Magnetic Materials (CSMM), and Department of Physics, National University of Singapore, Singapore 119260, Singapore
J. W. Chai: Institute of Materials Research and Engineering, Singapore 117602, Singapore
W. C. Tjiu: Institute of Materials Research and Engineering, Singapore 117602, Singapore
J. S. Pan: Institute of Materials Research and Engineering, Singapore 117602, Singapore
A. C. H. Huan: Institute of Materials Research and Engineering, Singapore 117602, Singapore
W. Feng: Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260, Singapore
J. S. Lim: Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260, Singapore
W. J. Yoo: Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260, Singapore
W. K. Choi: Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260, Singapore

Surface Review and Letters (SRL), 2001, vol. 08, issue 05, 521-526

Abstract: In this paper, we report the RHEED and XPS studies of the decomposition of silicon dioxide by the bombardment of metal ions and the growth of ultrathin crystalline zirconia oxide film on silicon. Through XPS analysis, it was found that silicon dioxide could be decomposed by the bombardment of Zr ions in high temperature and lower partial pressure. Silicon dioxide was decomposed into evaporated silicon oxide, while part of the oxygen in silicon dioxide reacted with metal Zr ions to form stable zirconia oxide film. The metal ions reacted with silicon dioxide homogenously. Because of the smoothness of native silicon dioxide surface and atomically abrupt silicon dioxide interface with silicon, native oxide layer on silicon wafer was evenly removed and a sharp stable crystalline zirconia oxide interface with silicon was formed. The crystalline yittria-stabilized zirconia oxide (YSZ) film with equivalent electrical oxide thickness 1.46 nm show excellent electrical properties, the interface state density less than2 × 1011eV-1cm-2and leakage current1.1 × 10-3A/cm2at 1.0 V bias. It demonstrates that this method can be used to the deposition of high-κ metal oxide as alternative dielectrics for future generation device.

Keywords: 85.30.-z; 77.55.+f; 68.35.Ct; 81.40.T (search for similar items in EconPapers)
Date: 2001
References: Add references at CitEc
Citations:

Downloads: (external link)
http://www.worldscientific.com/doi/abs/10.1142/S0218625X01001282
Access to full text is restricted to subscribers

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:wsi:srlxxx:v:08:y:2001:i:05:n:s0218625x01001282

Ordering information: This journal article can be ordered from

DOI: 10.1142/S0218625X01001282

Access Statistics for this article

Surface Review and Letters (SRL) is currently edited by S Y Tong

More articles in Surface Review and Letters (SRL) from World Scientific Publishing Co. Pte. Ltd.
Bibliographic data for series maintained by Tai Tone Lim ().