A STUDY ON ELECTROLUMINESCENCE FROMAu/Ge-CONTAINING SILICON OXIDE/p-SiANDAu/Si-RICH SILICON OXIDE/p-SiSTRUCTURES

S. Y. Ma (), Y. P. Guo, Y. Y. Wang and X. Q. Liu
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S. Y. Ma: Department of Physics, Northwest Normal University, Lanzhou 730070, China
Y. P. Guo: Department of Physics, National University of Singapore, Singapore 119260, Singapore
Y. Y. Wang: Department of Physics, Lanzhou University, Lanzhou 730000, China
X. Q. Liu: Department of Physics, Lanzhou University, Lanzhou 730000, China

Surface Review and Letters (SRL), 2001, vol. 08, issue 05, 483-486

Abstract: Ge-containing silicon oxide (GSO) films (5–15 nm) and Si-rich silicon oxide (SSO) films (5–15 nm) were deposited using the RF magnetron sputtering technique with aGe–SiO2and aSi–SiO2composite target, respectively. TheAu/GSO/p-SiandAu/SSO/p-Sistructures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both of theAu/GSO/p-SiandAu/SSO/p-Sistructures have rectifying behavior. All the EL spectra from the two types of the structure have almost unchanged peak positions around 650 nm (~1.9 eV) and are independent of applied forward biases. The EL mechanisms for theAu/GSO/p-SiandAu/SSO/p-Sistructures have been discussed.

Date: 2001
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DOI: 10.1142/S0218625X01001361

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